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Special Issue (2) 2010, 27-31

Characteristics of Diode End-Pumped Passively Q-Switched Solid-State Cr 3+:LiSAF Laser

Hao Nguyen Van 1,2, Hoang Nguyen Dinh 1, Quang Ngo Khoa 1,3, Thang Dao Duy 1, Hung Nguyen Dai 1

1 Center for Quantum Electronics, Institute of Physics, VAST
10 Dao Tan, Ba Dinh, Hanoi, Vietnam
2 Thai Nguyen University of Science, Quyet Thang, Thai Nguyen city, Vietnam
3 Hue University, Hue city, Vietnam

Received:

Received: 29 June 2010; accepted: 13 September 2010

DOI:   10.12921/cmst.2010.SI.02.27-31

OAI:   oai:lib.psnc.pl:698

Abstract:

We numerically investigated the characteristics of diode-end-pumped passively Q-switched solid-state Cr3+:LiSAF lasers. A Cr4+:YSO crystal is used as an intra-cavity saturable absorber. Our obtained results indicate the influences of resonator and pumping parameters on the characteristics of passively Q-switched solid-state Cr3+:LiSAF laser. Particularly, our numerical investigations are done in respect to the Cr3+:LiSAF laser medium of a very wide gain spectrum from 700 nm to 920 nm. Using a CW diode pumping at 670 nm and a Cr3+:LiSAF crystal of 3 mm long and 1 at.%, a stable generation of Q-switching nanosecond Cr3+:LiSAF laser pulse at 850 nm is obtainable with a pulse energy of about 2 mili-joule.

Key words:

Cr:LiSAF, Cr:YSO, passively Q-switch laser

References:

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