Generation of Picosecond Laser Pulses at 1064 nm from All Solid-State Passively Mode-Locked Lasers
Khanh Do Quoc, Nghia Nguyen Trong, Huy Trinh Dinh, Hung Nguyen Dai
Center for Quantum Electronics, Institute of Physics, VAST
10 Dao Tan Street, Ba Dinh Dist., Ha Noi, Vietnam
Received:
Received: 29 June 2010; accepted: 13 September 2010
DOI: 10.12921/cmst.2010.SI.02.33-38
OAI: oai:lib.psnc.pl:699
Abstract:
Using semiconductor saturable absorber mirror and diode end-pumping configurations, all solid-state passively mode-locked Nd3+:YVO4 lasers have been successfully developed. The lasers efficiently provide a stable train of ultra-short laser pulses of 12 ps at 1064 nm at the pulse repetition rate adjustable from 8.8 MHz to 100 MHz. The peak power of 1.3 kW and an average laser power of 940 mW were obtained at the pulse repetitive rate of 60 MHz, corresponding to a laser conversion efficiency of 43%. In order to obtain lower pulse repetitive rate and, therefore, higher peak power, a long laser resonator (larger than 15 m) is proposed and successfully developed for diode end-pumped passively mode-locked laser operation using a simple multiple-pass cavity configuration. As a result, the peak laser power up to 5.1 kW was obtained at the pulse repetitive rate of 8.8 MHz. The experimental results of the picosecond laser amplification and the harmonic generations at 532 nm (2nd), 355 nm (3rd) and 266 nm (4th) are presented.
Key words:
laser diode pumping, passive mode-locking, solid-state laser
References:
[1] Principles of lasers. (Ed. O. Svelto. 4th edition, Plenum Press) p. 359 (1998).
[2] S. Forget, F. Balembois, G. Lucas-Leclin, P. Georges, Opt. Com. 220, 187 (2003).
[3] N.H. Schiller, X.M. Zhao et al, Appl. Opt. 28, 946 (1989).
[4] J.B. Deaton, Jr., A.D.W. Mckie, J.B. Spicer, J.W. Wagner, Appl. Phys. Lett. 56, 2390 (1990).
[5] A. Herriott, H. Kogelnik, R. Kompfner, Appl. Opt. 3, 523 (1994).
[6] S.H. Cho, F.X. Kärtner, U. Morgner, E.P. Ippen et al., Opt. Lett. 26, 560 (2000).
[7] S.H. Cho, B.E. Bouma, E.P. Ippen, J.G. Fujimoto, Opt, Lett. 24, 417 (1999).
[8] U. Keller, D.A. B. Miller, G.D. Boyd, T.H. Chiu et al., Opt. Lett. 17, 505 (1992).
[9] U. Keller, K.J. Weingarten et al., IEEE J. Sel. Top. Quant. Electron. 2, 453 (1996).
[10] C. Hönninger, R. Paschotta et al., J. Opt. Soc. Am. B 16, 46 (1999).
[11] G.J. Spühler, T. Südmeyer, R. Paschotta et al. Appl. Phys. B 71, 19 (2000).
[12] N.T. Nghia, Do Q. Khanh et al. ASEAN J. Scien.&Tech. for Develop. 24, 1-2, 139 (2007).
Using semiconductor saturable absorber mirror and diode end-pumping configurations, all solid-state passively mode-locked Nd3+:YVO4 lasers have been successfully developed. The lasers efficiently provide a stable train of ultra-short laser pulses of 12 ps at 1064 nm at the pulse repetition rate adjustable from 8.8 MHz to 100 MHz. The peak power of 1.3 kW and an average laser power of 940 mW were obtained at the pulse repetitive rate of 60 MHz, corresponding to a laser conversion efficiency of 43%. In order to obtain lower pulse repetitive rate and, therefore, higher peak power, a long laser resonator (larger than 15 m) is proposed and successfully developed for diode end-pumped passively mode-locked laser operation using a simple multiple-pass cavity configuration. As a result, the peak laser power up to 5.1 kW was obtained at the pulse repetitive rate of 8.8 MHz. The experimental results of the picosecond laser amplification and the harmonic generations at 532 nm (2nd), 355 nm (3rd) and 266 nm (4th) are presented.
Key words:
laser diode pumping, passive mode-locking, solid-state laser
References:
[1] Principles of lasers. (Ed. O. Svelto. 4th edition, Plenum Press) p. 359 (1998).
[2] S. Forget, F. Balembois, G. Lucas-Leclin, P. Georges, Opt. Com. 220, 187 (2003).
[3] N.H. Schiller, X.M. Zhao et al, Appl. Opt. 28, 946 (1989).
[4] J.B. Deaton, Jr., A.D.W. Mckie, J.B. Spicer, J.W. Wagner, Appl. Phys. Lett. 56, 2390 (1990).
[5] A. Herriott, H. Kogelnik, R. Kompfner, Appl. Opt. 3, 523 (1994).
[6] S.H. Cho, F.X. Kärtner, U. Morgner, E.P. Ippen et al., Opt. Lett. 26, 560 (2000).
[7] S.H. Cho, B.E. Bouma, E.P. Ippen, J.G. Fujimoto, Opt, Lett. 24, 417 (1999).
[8] U. Keller, D.A. B. Miller, G.D. Boyd, T.H. Chiu et al., Opt. Lett. 17, 505 (1992).
[9] U. Keller, K.J. Weingarten et al., IEEE J. Sel. Top. Quant. Electron. 2, 453 (1996).
[10] C. Hönninger, R. Paschotta et al., J. Opt. Soc. Am. B 16, 46 (1999).
[11] G.J. Spühler, T. Südmeyer, R. Paschotta et al. Appl. Phys. B 71, 19 (2000).
[12] N.T. Nghia, Do Q. Khanh et al. ASEAN J. Scien.&Tech. for Develop. 24, 1-2, 139 (2007).
